General
| Base Product Number | TRS8E65 |
|---|---|
| Capacitance @ Vr, F | 28pF @ 650V, 1MHz |
| Manufacturer | Toshiba Semiconductor and Storage |
| Mounting Type | Through Hole |
| Product Status | Active |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
Toshiba Semiconductor and Storage
TRS8E65F,S1Q
DatasheetAnalog & Power
DIODE SIL CARB 650V 8A TO220-2L
Technical Specifications
Structured electrical, mechanical and environmental parameters from imported product attributes.
Electrical
| Voltage - DC Reverse (Vr) (Max) | 650 V |
|---|---|
| Voltage - Forward (Vf) (Max) @ If | 1.6 V @ 8 A |
| Current - Average Rectified (Io) | 8A |
| Current - Reverse Leakage @ Vr | 40 µA @ 650 V |
| Speed | No Recovery Time > 500mA (Io) |
Mechanical
| Package | Tube |
|---|---|
| Package / Case | TO-220-2 |
| Supplier Device Package | TO-220-2L |
Environmental
| Operating Temperature - Junction | 175°C (Max) |
|---|