Structured electrical, mechanical and environmental parameters from imported product attributes.
| Capacitance @ Vr, F | 263pF @ 1V, 1MHz |
|---|---|
| Manufacturer | Toshiba Semiconductor and Storage |
| Mounting Type | Surface Mount |
| Packaging | Tape & Reel (TR) Cut Tape (CT) |
| Part Status | Active |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
|---|---|
| Voltage - Forward (Vf) (Max) @ If | 1.34 V @ 4 A |
| Current - Average Rectified (Io) | 4A |
| Current - Reverse Leakage @ Vr | 55 µA @ 650 V |
| Speed | No Recovery Time > 500mA (Io) |
| Package / Case | 4-VSFN Exposed Pad |
|---|---|
| Supplier Device Package | 4-DFN-EP (8x8) |
| Operating Temperature - Junction | 175°C |
|---|