TPW1R005PL,L1Q

Toshiba Semiconductor and Storage

TPW1R005PL,L1Q

Datasheet

Analog & Power

MOSFET N-CH 45V 300A 8DSOP

Active8-PowerVDFNAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Base Product NumberTPW1R005
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs122 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds9600 pF @ 22.5 V
ManufacturerToshiba Semiconductor and Storage
Mounting TypeSurface Mount
PackagingTape & Reel (TR) Cut Tape (CT)
Part StatusActive
SeriesU-MOSIX-H
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id2.4V @ 1mA

Electrical

Drain-to-Source Voltage45 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C300A (Tc)
Max Power Dissipation960mW (Ta), 170W (Tc)

Mechanical

Package / Case8-PowerVDFN
Supplier Device Package8-DSOP Advance

Environmental

Operating Temperature175°C