Structured electrical, mechanical and environmental parameters from imported product attributes.
| Rds On (Max) @ Id, Vgs | 1.14mOhm @ 60A, 10V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 55 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4560 pF @ 10 V |
| Manufacturer | Toshiba Semiconductor and Storage |
| Mounting Type | Surface Mount |
| Product Status | Active |
| Series | U-MOSIX-H |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 3V @ 500µA |
| Drain-to-Source Voltage | 40 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 120A (Ta) |
| Max Power Dissipation | 960mW (Ta), 132W (Tc) |
| Package | Tape & Reel (TR) |
|---|---|
| Package / Case | 8-SOIC (0.197", 5.00mm Width) |
| Supplier Device Package | 8-SOP Advance (5x5) |
| Operating Temperature | 175°C |
|---|