General
| Channel Type | Single |
|---|---|
| Driven Configuration | High-Side |
| Gate Type | N-Channel MOSFET |
| Input Type | Non-Inverting |
| Manufacturer | Toshiba Semiconductor and Storage |
| Mounting Type | Surface Mount |
| Number of Drivers | 1 |
| Product Status | Active |

Toshiba Semiconductor and Storage
IPD MOSFET IC WSON10 PD=1.84W VD
Structured electrical, mechanical and environmental parameters from imported product attributes.
| Channel Type | Single |
|---|---|
| Driven Configuration | High-Side |
| Gate Type | N-Channel MOSFET |
| Input Type | Non-Inverting |
| Manufacturer | Toshiba Semiconductor and Storage |
| Mounting Type | Surface Mount |
| Number of Drivers | 1 |
| Product Status | Active |
| Current - Peak Output (Source, Sink) | 5mA |
|---|---|
| Logic Voltage - VIL, VIH | 0.6V, 2.4V |
| Supply Voltage | 5.75V ~ 26V |
| Package | Tube |
|---|---|
| Package / Case | 10-WFDFN Exposed Pad |
| Supplier Device Package | 10-WSON (3x3) |
| Operating Temperature | -40°C~125°C(TJ) |
|---|