Structured electrical, mechanical and environmental parameters from imported product attributes.
| Rds On (Max) @ Id, Vgs | 180mOhm @ 1.1A, 10V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 7.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 360 pF @ 10 V |
| Manufacturer | Toshiba Semiconductor and Storage |
| Mounting Type | Surface Mount |
| Product Status | Obsolete |
| Series | U-MOSIII-H |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 2.3V @ 1mA |
| Drain-to-Source Voltage | 100 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 2.2A (Ta) |
| Max Power Dissipation | 840mW (Ta) |
| Package | Tape & Reel (TR) |
|---|---|
| Package / Case | 8-SMD, Flat Lead |
| Supplier Device Package | PS-8 (2.9x2.4) |
| Operating Temperature | 150°C(TJ) |
|---|