TPCC8009,LQ(O

Toshiba Semiconductor and Storage

TPCC8009,LQ(O

Analog & Power

MOSFET N-CH 30V 24A 8TSON

Obsolete8-PowerVDFNAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs7mOhm @ 12A, 10V
Base Product NumberTPCC8009
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1270 pF @ 10 V
ManufacturerToshiba Semiconductor and Storage
Mounting TypeSurface Mount
Product StatusObsolete
SeriesU-MOSIV
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id3V @ 200µA

Electrical

Drain-to-Source Voltage30 V
Current - Continuous Drain (Id) @ 25°C24A (Ta)

Mechanical

PackageTape & Reel (TR)
Package / Case8-PowerVDFN
Supplier Device Package8-TSON Advance (3.1x3.1)

Environmental

Operating Temperature150°C (TJ)