Structured electrical, mechanical and environmental parameters from imported product attributes.
| Rds On (Max) @ Id, Vgs | 6.8mOhm @ 12.5A, 10V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 30 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1600 pF @ 10 V |
| Manufacturer | Toshiba Semiconductor and Storage |
| Mounting Type | Surface Mount |
| Product Status | Obsolete |
| Series | U-MOSIV |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±25V |
| Vgs(th) (Max) @ Id | 2.5V @ 1A |
| Drain-to-Source Voltage | 30 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 25A (Ta) |
| Max Power Dissipation | 700mW (Ta), 30W (Tc) |
| Package | Cut Tape (CT) |
|---|---|
| Package / Case | 8-VDFN Exposed Pad |
| Supplier Device Package | 8-TSON Advance (3.3x3.3) |
| Operating Temperature | 150°C (TJ) |
|---|