Structured electrical, mechanical and environmental parameters from imported product attributes.
| Rds On (Max) @ Id, Vgs | 3.5mOhm @ 20A, 4.5V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 32 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2900 pF @ 10 V |
| Manufacturer | Toshiba Semiconductor and Storage |
| Mounting Type | Surface Mount |
| Product Status | Obsolete |
| Series | U-MOSIII-H |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±12V |
| Vgs(th) (Max) @ Id | 1.3V @ 200µA |
| Drain-to-Source Voltage | 20 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Current - Continuous Drain (Id) @ 25°C | 40A (Ta) |
| Max Power Dissipation | 1.6W (Ta), 45W (Tc) |
| Package | Tape & Reel (TR) |
|---|---|
| Package / Case | 8-PowerVDFN |
| Supplier Device Package | 8-SOP Advance (5x5) |
| Operating Temperature | 150°C (TJ) |
|---|