TPC8405(TE12L,Q,M)

Toshiba Semiconductor and Storage

TPC8405(TE12L,Q,M)

Analog & Power

MOSFET N/P-CH 30V 6A/4.5A 8SOP

Obsolete8-SOIC (0.173", 4.40mm Width)Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs26mOhm @ 3A, 10V
Base Product NumberTPC8405
ConfigurationN and P-Channel
FET FeatureLogic Level Gate
Gate Charge (Qg) (Max) @ Vgs27nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds1240pF @ 10V
ManufacturerToshiba Semiconductor and Storage
Mounting TypeSurface Mount
Product StatusObsolete
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id2V @ 1mA

Electrical

Drain-to-Source Voltage30V
Current - Continuous Drain (Id) @ 25°C6A, 4.5A
Power - Max450mW

Mechanical

PackageTape & Reel (TR)
Package / Case8-SOIC (0.173", 4.40mm Width)
Supplier Device Package8-SOP (5.5x6.0)

Environmental

Operating Temperature150°C (TJ)