TPC8227-H,LQ

Toshiba Semiconductor and Storage

TPC8227-H,LQ

Analog & Power

MOSFET 2N-CH 40V 5.1A 8SOP

Active8-SOIC (0.154", 3.90mm Width)Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs33mOhm @ 2.6A, 10V
Base Product NumberTPC8227
Configuration2 N-Channel (Dual)
Gate Charge (Qg) (Max) @ Vgs10nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds640pF @ 10V
ManufacturerToshiba Semiconductor and Storage
Mounting TypeSurface Mount
Product StatusActive
SeriesU-MOSVI-H
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id2.3V @ 100µA

Electrical

Drain-to-Source Voltage40V
Current - Continuous Drain (Id) @ 25°C5.1A
Power - Max1.5W (Ta)

Mechanical

PackageBulk
Package / Case8-SOIC (0.154", 3.90mm Width)
Supplier Device Package8-SOP

Environmental

Operating Temperature150°C