TPC8221-H,LQ(S

Toshiba Semiconductor and Storage

TPC8221-H,LQ(S

Analog & Power

MOSFET 2N-CH 30V 6A 8SOP

Obsolete8-SOIC (0.154", 3.90mm Width)Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs25mOhm @ 3A, 10V
Base Product NumberTPC8221
Configuration2 N-Channel (Dual)
Gate Charge (Qg) (Max) @ Vgs12nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds830pF @ 10V
ManufacturerToshiba Semiconductor and Storage
Mounting TypeSurface Mount
Product StatusObsolete
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id2.3V @ 100µA

Electrical

Drain-to-Source Voltage30V
Current - Continuous Drain (Id) @ 25°C6A
Power - Max450mW

Mechanical

PackageTape & Reel (TR)
Package / Case8-SOIC (0.154", 3.90mm Width)
Supplier Device Package8-SOP

Environmental

Operating Temperature150°C (TJ)