TPC8211(TE12L,Q,M)

Toshiba Semiconductor and Storage

TPC8211(TE12L,Q,M)

Analog & Power

MOSFET 2N-CH 30V 5.5A 8SOP

Obsolete8-SOIC (0.173", 4.40mm Width)Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs36mOhm @ 3A, 10V
Base Product NumberTPC8211
Configuration2 N-Channel (Dual)
FET FeatureLogic Level Gate
Gate Charge (Qg) (Max) @ Vgs25nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds1250pF @ 10V
ManufacturerToshiba Semiconductor and Storage
Mounting TypeSurface Mount
Product StatusObsolete
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id2.5V @ 1mA

Electrical

Drain-to-Source Voltage30V
Current - Continuous Drain (Id) @ 25°C5.5A
Power - Max450mW

Mechanical

PackageTape & Reel (TR)
Package / Case8-SOIC (0.173", 4.40mm Width)
Supplier Device Package8-SOP (5.5x6.0)

Environmental

Operating Temperature150°C (TJ)