TPC8207(TE12L)

Toshiba Semiconductor and Storage

TPC8207(TE12L)

Analog & Power

MOSFET 2N-CH 20V 6A 8-SOP

Obsolete8-SOIC (0.173", 4.40mm Width)Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs20mOhm @ 4.8A, 4V
Base Product NumberTPC8207
Configuration2 N-Channel (Dual)
FET FeatureLogic Level Gate
Gate Charge (Qg) (Max) @ Vgs22nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds2010pF @ 10V
ManufacturerToshiba Semiconductor and Storage
Mounting TypeSurface Mount
Product StatusObsolete
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id1.2V @ 200µA

Electrical

Drain-to-Source Voltage20V
Current - Continuous Drain (Id) @ 25°C6A
Power - Max750mW

Mechanical

Package / Case8-SOIC (0.173", 4.40mm Width)
Supplier Device Package8-SOP (5.5x6.0)