TPC8109(TE12L)

Toshiba Semiconductor and Storage

TPC8109(TE12L)

Analog & Power

MOSFET P-CH 30V 10A 8-SOP

Obsolete8-SOIC (0.173", 4.40mm Width)Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs20mOhm @ 5A, 10V
Base Product NumberTPC8109
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds2260 pF @ 10 V
ManufacturerToshiba Semiconductor and Storage
Mounting TypeSurface Mount
Product StatusObsolete
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id2V @ 1mA

Electrical

Drain-to-Source Voltage30 V
Current - Continuous Drain (Id) @ 25°C10A (Ta)

Mechanical

PackageCut Tape (CT)
Package / Case8-SOIC (0.173", 4.40mm Width)
Supplier Device Package8-SOP (5.5x6.0)