TPC8038-H(TE12L,Q)

Toshiba Semiconductor and Storage

TPC8038-H(TE12L,Q)

Analog & Power

MOSFET N-CH 30V 12A 8SOP

Obsolete8-SOIC (0.173", 4.40mm Width)Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs11.4mOhm @ 6A, 10V
Base Product NumberTPC8038
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds2150 pF @ 10 V
ManufacturerToshiba Semiconductor and Storage
Mounting TypeSurface Mount
Product StatusObsolete
SeriesU-MOSV-H
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id2.5V @ 1mA

Electrical

Drain-to-Source Voltage30 V
Current - Continuous Drain (Id) @ 25°C12A (Ta)

Mechanical

PackageTape & Reel (TR)
Package / Case8-SOIC (0.173", 4.40mm Width)
Supplier Device Package8-SOP (5.5x6.0)

Environmental

Operating Temperature150°C (TJ)