TPC6110(TE85L,F,M)

Name: TPC6110(TE85L,F,M)
Brand: Toshiba Semiconductor and Storage

Analog & Power

MOSFET P-CH 30V 4.5A VS-6

ObsoleteSOT-23-6 Thin, TSOT-23-6Analog & Power

Structured electrical, mechanical and environmental parameters from imported product attributes.

Rds On (Max) @ Id, Vgs	56mOhm @ 2.2A, 10V
Base Product Number	TPC6110
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	510 pF @ 10 V
Manufacturer	Toshiba Semiconductor and Storage
Mounting Type	Surface Mount
Product Status	Obsolete
Series	U-MOSVI
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	2V @ 100µA

Drain-to-Source Voltage	30 V
Current - Continuous Drain (Id) @ 25°C	4.5A (Ta)
Max Power Dissipation	700mW (Ta)

Operating Temperature	150°C(TJ)