Structured electrical, mechanical and environmental parameters from imported product attributes.
| Rds On (Max) @ Id, Vgs | 59mOhm @ 2.5A, 10V |
|---|---|
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 12.3 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 490 pF @ 10 V |
| Manufacturer | Toshiba Semiconductor and Storage |
| Mounting Type | Surface Mount |
| Product Status | Obsolete |
| Series | U-MOSIII-H |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 1.2V @ 200µA |
| Drain-to-Source Voltage | 30 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 5A (Ta) |
| Max Power Dissipation | 700mW (Ta) |
| Package | Tape & Reel (TR) |
|---|---|
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Supplier Device Package | VS-6 (2.9x2.8) |
| Operating Temperature | 150°C (TJ) |
|---|