General
| Rds On (Max) @ Id, Vgs | 950mOhm @ 3.3A, 10V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 13 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 700 pF @ 300 V |
| Manufacturer | Toshiba Semiconductor and Storage |
| Mounting Type | Through Hole |
| Packaging | Tube |
| Part Status | Active |
| Series | DTMOSIV |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 4V @ 280µA |