General
| Rds On (Max) @ Id, Vgs | 40mOhm @ 21A, 10V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 135 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6500 pF @ 300 V |
| Manufacturer | Toshiba Semiconductor and Storage |
| Mounting Type | Through Hole |
| Product Status | Active |
| Series | DTMOSIV-H |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±30V |
| Vgs(th) (Max) @ Id | 3.5V @ 3.1mA |