TK60P03M1,RQ(S

Name: TK60P03M1,RQ(S
Brand: Toshiba Semiconductor and Storage

Analog & Power

MOSFET N-CH 30V 60A DPAK

ObsoleteTO-252-3, DPAK (2 Leads + Tab), SC-63Analog & Power

Structured electrical, mechanical and environmental parameters from imported product attributes.

Rds On (Max) @ Id, Vgs	6.4mOhm @ 30A, 10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	2700 pF @ 10 V
Manufacturer	Toshiba Semiconductor and Storage
Mounting Type	Surface Mount
Packaging	Tape & Reel (TR)
Part Status	Obsolete
Series	U-MOSVI-H
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±20V
Vgs(th) (Max) @ Id	2.3V @ 500µA

Drain-to-Source Voltage	30 V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C	60A (Ta)
Max Power Dissipation	63W (Tc)

Package / Case	TO-252-3, DPAK (2 Leads + Tab), SC-63
Supplier Device Package	DPAK

Operating Temperature	150°C (TJ)