Toshiba Semiconductor and Storage
MOSFET N-CH 100V 60A TO220SM
Structured electrical, mechanical and environmental parameters from imported product attributes.
| Rds On (Max) @ Id, Vgs | 6.11mOhm @ 30A, 10V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 60 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4320 pF @ 10 V |
| Manufacturer | Toshiba Semiconductor and Storage |
| Mounting Type | Surface Mount |
| Packaging | Tape & Reel (TR) Cut Tape (CT) |
| Part Status | Active |
| Series | U-MOSVIII-H |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 3.5V @ 500µA |
| Drain-to-Source Voltage | 100 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 60A (Ta) |
| Max Power Dissipation | 205W (Tc) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
|---|---|
| Supplier Device Package | TO-220SM(W) |
| Operating Temperature | 175°C |
|---|