TK50E06K3A,S1X(S

Toshiba Semiconductor and Storage

TK50E06K3A,S1X(S

Analog & Power

MOSFET N-CH 60V 50A TO220-3

ObsoleteTO-220-3Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs8.5mOhm @ 25A, 10V
Base Product NumberTK50E06
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs54 nC @ 10 V
ManufacturerToshiba Semiconductor and Storage
Mounting TypeThrough Hole
Product StatusObsolete
SeriesU-MOSIV
TechnologyMOSFET (Metal Oxide)

Electrical

Drain-to-Source Voltage60 V
Current - Continuous Drain (Id) @ 25°C50A (Tc)

Mechanical

PackageTube
Package / CaseTO-220-3
Supplier Device PackageTO-220-3