TK45P03M1,RQ(S

Toshiba Semiconductor and Storage

TK45P03M1,RQ(S

Datasheet

Analog & Power

MOSFET N-CH 30V 45A DPAK

ObsoleteTO-252-3, DPak (2 Leads + Tab), SC-63Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs9.7mOhm @ 22.5A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1500 pF @ 10 V
ManufacturerToshiba Semiconductor and Storage
Mounting TypeSurface Mount
Product StatusObsolete
SeriesU-MOSVI-H
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id2.3V @ 200µA

Electrical

Drain-to-Source Voltage30 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C45A (Ta)

Mechanical

PackageTape & Reel (TR)
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device PackageDPAK