TK40E10K3,S1X(S

Toshiba Semiconductor and Storage

TK40E10K3,S1X(S

Analog & Power

MOSFET N-CH 100V 40A TO220-3

ObsoleteTO-220-3Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs15mOhm @ 20A, 10V
Base Product NumberTK40E10
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs84 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds4000 pF @ 10 V
ManufacturerToshiba Semiconductor and Storage
Mounting TypeThrough Hole
Product StatusObsolete
SeriesU-MOSIV
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id4V @ 1mA

Electrical

Drain-to-Source Voltage100 V
Current - Continuous Drain (Id) @ 25°C40A (Ta)

Mechanical

PackageTube
Package / CaseTO-220-3
Supplier Device PackageTO-220-3