Structured electrical, mechanical and environmental parameters from imported product attributes.
| Rds On (Max) @ Id, Vgs | 18mOhm @ 12.5A, 10V |
|---|---|
| Base Product Number | TK25E06 |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 29 nC @ 10 V |
| Manufacturer | Toshiba Semiconductor and Storage |
| Mounting Type | Through Hole |
| Product Status | Obsolete |
| Series | U-MOSIV |
| Technology | MOSFET (Metal Oxide) |
| Drain-to-Source Voltage | 60 V |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 25A (Ta) |
| Max Power Dissipation | 60W (Tc) |
| Package | Tube |
|---|---|
| Package / Case | TO-220-3 |
| Supplier Device Package | TO-220-3 |
| Operating Temperature | 150°C(TJ) |
|---|