General
| Rds On (Max) @ Id, Vgs | 42mOhm @ 9A, 10V |
|---|---|
| Base Product Number | TK18E10 |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 33 nC @ 10 V |
| Manufacturer | Toshiba Semiconductor and Storage |
| Mounting Type | Through Hole |
| Product Status | Obsolete |
| Series | U-MOSIV |
| Technology | MOSFET (Metal Oxide) |