TK16A55D(STA4,Q,M)

Toshiba Semiconductor and Storage

TK16A55D(STA4,Q,M)

Analog & Power

MOSFET N-CH 550V 16A TO220SIS

ActiveTO-220-3 Full PackAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs330mOhm @ 8A, 10V
Base Product NumberTK16A55
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds2600 pF @ 25 V
ManufacturerToshiba Semiconductor and Storage
Mounting TypeThrough Hole
Product StatusActive
Seriesπ-MOSVII
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id4V @ 1mA

Electrical

Drain-to-Source Voltage550 V
Current - Continuous Drain (Id) @ 25°C16A (Ta)

Mechanical

PackageTube
Package / CaseTO-220-3 Full Pack
Supplier Device PackageTO-220SIS

Environmental

Operating Temperature150°C (TJ)