TK065U65Z,RQ

Name: TK065U65Z,RQ
Brand: Toshiba Semiconductor and Storage

Analog & Power

DTMOS VI TOLL PD=270W F=1MHZ

Active8-PowerSFNAnalog & Power

Structured electrical, mechanical and environmental parameters from imported product attributes.

Rds On (Max) @ Id, Vgs	65mOhm @ 19A, 10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	3650 pF @ 300 V
Manufacturer	Toshiba Semiconductor and Storage
Mounting Type	Surface Mount
Product Status	Active
Series	DTMOSVI
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±30V
Vgs(th) (Max) @ Id	4V @ 1.69mA

Drain-to-Source Voltage	650 V
Drive Voltage (Max Rds On, Min Rds On)	10V
Current - Continuous Drain (Id) @ 25°C	38A (Ta)
Max Power Dissipation	270W (Tc)

Operating Temperature	150°C