TK055U60Z1,RQ

Toshiba Semiconductor and Storage

TK055U60Z1,RQ

Datasheet

Analog & Power

600V DTMOS VI TOLL 55MOHM

Active8-PowerSFNAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs55mOhm @ 15A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds3680 pF @ 300 V
ManufacturerToshiba Semiconductor and Storage
Mounting TypeSurface Mount
PackagingTape & Reel (TR) Cut Tape (CT)
Part StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±30V
Vgs(th) (Max) @ Id4V @ 1.69mA

Electrical

Drain-to-Source Voltage600 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C40A (Ta)
Max Power Dissipation270W (Tc)

Mechanical

Package / Case8-PowerSFN
Supplier Device PackageTOLL

Environmental

Operating Temperature150°C