General
| Base Product Number | TBC857 |
|---|---|
| Manufacturer | Toshiba Semiconductor and Storage |
| Mounting Type | Surface Mount |
| Product Status | Active |
| Transistor Type | PNP |
| Vce Saturation (Max) @ Ib, Ic | 650mV @ 100mA, 5mA |
Technical Specifications
Structured electrical, mechanical and environmental parameters from imported product attributes.
Electrical
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
|---|---|
| Current - Collector (Ic) (Max) | 150 mA |
| Current - Collector Cutoff (Max) | 30nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 210 @ 2mA, 5V |
| Power - Max | 320 mW |
| Frequency - Transition | 80MHz |
Mechanical
| Package | Tape & Reel (TR) Cut Tape (CT) |
|---|---|
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Supplier Device Package | SOT-23-3 |
Environmental
| Operating Temperature | 150°C (TJ) |
|---|