SSM6P35FE,LM

Toshiba Semiconductor and Storage

SSM6P35FE,LM

Datasheet

Analog & Power

MOSFET 2P-CH 20V 0.1A ES6

ActiveSOT-563, SOT-666Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs8Ohm @ 50mA, 4V
Base Product NumberSSM6P35
Configuration2 P-Channel (Dual)
Input Capacitance (Ciss) (Max) @ Vds12.2pF @ 3V
ManufacturerToshiba Semiconductor and Storage
Mounting TypeSurface Mount
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id1V @ 1mA

Electrical

Drain-to-Source Voltage20V
Current - Continuous Drain (Id) @ 25°C100mA
Power - Max150mW

Mechanical

PackageTape & Reel (TR)
Package / CaseSOT-563, SOT-666
Supplier Device PackageES6

Environmental

Operating Temperature150°C