SSM6P35AFE,LF

Toshiba Semiconductor and Storage

SSM6P35AFE,LF

Datasheet

Analog & Power

MOSFET 2P-CH 20V 0.25A ES6

ActiveSOT-563, SOT-666Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs1.4Ohm @ 150mA, 4.5V
Base Product NumberSSM6P35
Configuration2 P-Channel (Dual)
FET FeatureLogic Level Gate, 1.2V Drive
Input Capacitance (Ciss) (Max) @ Vds42pF @ 10V
ManufacturerToshiba Semiconductor and Storage
Mounting TypeSurface Mount
Product StatusActive
SeriesU-MOSVII
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id1V @ 100µA

Electrical

Drain-to-Source Voltage20V
Current - Continuous Drain (Id) @ 25°C250mA (Ta)
Power - Max150mW (Ta)

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Package / CaseSOT-563, SOT-666
Supplier Device PackageES6

Environmental

Operating Temperature150°C