SSM6N62TU,LXHF

Toshiba Semiconductor and Storage

SSM6N62TU,LXHF

Datasheet

Analog & Power

MOSFET 2N-CH 20V 0.8A UF6

Active6-SMD, Flat LeadsAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs85mOhm @ 800mA, 4.5V
Configuration2 N-Channel (Dual)
FET FeatureLogic Level Gate, 1.2V Drive
Gate Charge (Qg) (Max) @ Vgs2nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds177pF @ 10V
ManufacturerToshiba Semiconductor and Storage
Mounting TypeSurface Mount
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id1V @ 1mA

Electrical

Drain-to-Source Voltage20V
Current - Continuous Drain (Id) @ 25°C800mA (Ta)
Power - Max500mW (Ta)

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Package / Case6-SMD, Flat Leads
Supplier Device PackageUF6

Environmental

GradeAutomotive
Operating Temperature150°C
QualificationAEC-Q101