General
| Rds On (Max) @ Id, Vgs | 33mOhm @ 4A, 4.5V |
|---|---|
| Base Product Number | SSM6N61 |
| Configuration | 2 N-Channel (Dual) |
| FET Feature | Logic Level Gate, 1.5V Drive |
| Gate Charge (Qg) (Max) @ Vgs | 3.6nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | 410pF @ 10V |
| Manufacturer | Toshiba Semiconductor and Storage |
| Mounting Type | Surface Mount |
| Product Status | Active |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 1V @ 1mA |