SSM6N55NU,LF

Toshiba Semiconductor and Storage

SSM6N55NU,LF

Datasheet

Analog & Power

MOSFET 2N-CH 30V 4A 6DFN

Active6-WDFN Exposed PadAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs46mOhm @ 4A, 10V
Base Product NumberSSM6N55
Configuration2 N-Channel (Dual)
FET FeatureLogic Level Gate
Gate Charge (Qg) (Max) @ Vgs2.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds280pF @ 15V
ManufacturerToshiba Semiconductor and Storage
Mounting TypeSurface Mount
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id2.5V @ 100µA

Electrical

Drain-to-Source Voltage30V
Current - Continuous Drain (Id) @ 25°C4A
Power - Max1W

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Package / Case6-WDFN Exposed Pad
Supplier Device Package6-µDFN (2x2)

Environmental

Operating Temperature150°C (TJ)