SSM6N48FU,RF(D

Toshiba Semiconductor and Storage

SSM6N48FU,RF(D

Analog & Power

MOSFET 2N-CH 30V 0.1A US6

Obsolete6-TSSOP, SC-88, SOT-363Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs3.2Ohm @ 10mA, 4V
Base Product NumberSSM6N48
Configuration2 N-Channel (Dual)
FET FeatureLogic Level Gate, 2.5V Drive
Input Capacitance (Ciss) (Max) @ Vds15.1pF @ 3V
ManufacturerToshiba Semiconductor and Storage
Mounting TypeSurface Mount
Product StatusObsolete
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id1.5V @ 100µA

Electrical

Drain-to-Source Voltage30V
Current - Continuous Drain (Id) @ 25°C100mA (Ta)
Power - Max300mW

Mechanical

PackageTape & Reel (TR)
Package / Case6-TSSOP, SC-88, SOT-363
Supplier Device PackageUS6

Environmental

Operating Temperature-55°C ~ 150°C (TJ)