General
| Rds On (Max) @ Id, Vgs | 119mOhm @ 1A, 4V |
|---|---|
| Base Product Number | SSM6N39 |
| Configuration | 2 N-Channel (Dual) |
| Gate Charge (Qg) (Max) @ Vgs | 7.5nC @ 4V |
| Input Capacitance (Ciss) (Max) @ Vds | 260pF @ 10V |
| Manufacturer | Toshiba Semiconductor and Storage |
| Mounting Type | Surface Mount |
| Product Status | Active |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 1V @ 1mA |