SSM6N37FE,LM

Toshiba Semiconductor and Storage

SSM6N37FE,LM

Datasheet

Analog & Power

MOSFET 2N-CH 20V 0.25A ES6

ActiveSOT-563, SOT-666Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs2.2Ohm @ 100mA, 4.5V
Base Product NumberSSM6N37
Configuration2 N-Channel (Dual)
FET FeatureLogic Level Gate
Input Capacitance (Ciss) (Max) @ Vds12pF @ 10V
ManufacturerToshiba Semiconductor and Storage
Mounting TypeSurface Mount
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id1V @ 1mA

Electrical

Drain-to-Source Voltage20V
Current - Continuous Drain (Id) @ 25°C250mA
Power - Max150mW

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Package / CaseSOT-563, SOT-666
Supplier Device PackageES6

Environmental

Operating Temperature150°C (TJ)