SSM6L40TU,LF

Toshiba Semiconductor and Storage

SSM6L40TU,LF

Datasheet

Analog & Power

MOSFET N/P-CH 30V 1.6A UF6

Active6-SMD, Flat LeadsAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs122mOhm @ 1A, 10V, 226mOhm @ 1A, 10V
Base Product NumberSSM6L40
ConfigurationN and P-Channel
FET FeatureLogic Level Gate, 4V Drive
Gate Charge (Qg) (Max) @ Vgs5.1nC @ 10V, 2.9nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds180pF @ 15V, 120pF @ 15V
ManufacturerToshiba Semiconductor and Storage
Mounting TypeSurface Mount
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id2.6V @ 1mA, 2V @ 1mA

Electrical

Drain-to-Source Voltage30V
Current - Continuous Drain (Id) @ 25°C1.6A (Ta), 1.4A (Ta)
Power - Max500mW (Ta)

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Package / Case6-SMD, Flat Leads
Supplier Device PackageUF6

Environmental

Operating Temperature150°C