SSM6L39TU,LF

Toshiba Semiconductor and Storage

SSM6L39TU,LF

Datasheet

Analog & Power

MOSFET N/P-CH 20V 0.8A UF6

Active6-SMD, Flat LeadsAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs143mOhm @ 600MA, 4V
Base Product NumberSSM6L39
ConfigurationN and P-Channel
FET FeatureLogic Level Gate, 1.8V Drive
Input Capacitance (Ciss) (Max) @ Vds268pF @ 10V
ManufacturerToshiba Semiconductor and Storage
Mounting TypeSurface Mount
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id1V @ 1mA

Electrical

Drain-to-Source Voltage20V
Current - Continuous Drain (Id) @ 25°C800mA
Power - Max500mW

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Package / Case6-SMD, Flat Leads
Supplier Device PackageUF6

Environmental

Operating Temperature150°C (TJ)