SSM6L36FE,LM

Toshiba Semiconductor and Storage

SSM6L36FE,LM

Datasheet

Analog & Power

MOSFET N/P-CH 20V 0.5A ES6

ActiveSOT-563, SOT-666Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs630mOhm @ 200mA, 5V
Base Product NumberSSM6L36
ConfigurationN and P-Channel
FET FeatureLogic Level Gate
Gate Charge (Qg) (Max) @ Vgs1.23nC @ 4V
Input Capacitance (Ciss) (Max) @ Vds46pF @ 10V
ManufacturerToshiba Semiconductor and Storage
Mounting TypeSurface Mount
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id1V @ 1mA

Electrical

Drain-to-Source Voltage20V
Current - Continuous Drain (Id) @ 25°C500mA, 330mA
Power - Max150mW

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Package / CaseSOT-563, SOT-666
Supplier Device PackageES6

Environmental

Operating Temperature150°C (TJ)