Toshiba Semiconductor and Storage
MOSFET N/P-CH 20V 0.18A/0.1A ES6
Structured electrical, mechanical and environmental parameters from imported product attributes.
| Rds On (Max) @ Id, Vgs | 3Ohm @ 50mA, 4V |
|---|---|
| Base Product Number | SSM6L35 |
| Configuration | N and P-Channel |
| FET Feature | Logic Level Gate |
| Input Capacitance (Ciss) (Max) @ Vds | 9.5pF @ 3V |
| Manufacturer | Toshiba Semiconductor and Storage |
| Mounting Type | Surface Mount |
| Product Status | Active |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 1V @ 1mA |
| Drain-to-Source Voltage | 20V |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 180mA, 100mA |
| Power - Max | 150mW |
| Package | Tape & Reel (TR) Cut Tape (CT) |
|---|---|
| Package / Case | SOT-563, SOT-666 |
| Supplier Device Package | ES6 |
| Operating Temperature | 150°C (TJ) |
|---|