SSM6L14FE(TE85L,F)

Toshiba Semiconductor and Storage

SSM6L14FE(TE85L,F)

Datasheet

Analog & Power

MOSFET N/P-CH 20V 0.8A ES6

ActiveSOT-563, SOT-666Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs240mOhm @ 500mA, 4.5V, 300mOhm @ 400mA, 4.5V
Base Product NumberSSM6L14
ConfigurationN and P-Channel
FET FeatureLogic Level Gate, 1.5V Drive
Gate Charge (Qg) (Max) @ Vgs2nC @ 4.5V, 1.76nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds90pF @ 10V, 110pF @ 10V
ManufacturerToshiba Semiconductor and Storage
Mounting TypeSurface Mount
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id1V @ 1mA

Electrical

Drain-to-Source Voltage20V
Current - Continuous Drain (Id) @ 25°C800mA (Ta), 720mA (Ta)
Power - Max150mW (Ta)

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Package / CaseSOT-563, SOT-666
Supplier Device PackageES6

Environmental

Operating Temperature150°C