SSM6L12TU,LF

Toshiba Semiconductor and Storage

SSM6L12TU,LF

Datasheet

Analog & Power

MOSFET N/P-CH 30V/20V 0.5A UF6

Active6-SMD, Flat LeadsAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs145mOhm @ 500mA, 4.5V, 260mOhm @ 250mA, 4V
Base Product NumberSSM6L12
ConfigurationN and P-Channel
Input Capacitance (Ciss) (Max) @ Vds245pF @ 10V, 218pF @ 10V
ManufacturerToshiba Semiconductor and Storage
Mounting TypeSurface Mount
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id1.1V @ 100µA

Electrical

Drain-to-Source Voltage30V, 20V
Current - Continuous Drain (Id) @ 25°C500mA (Ta)
Power - Max500mW

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Package / Case6-SMD, Flat Leads
Supplier Device PackageUF6

Environmental

Operating Temperature150°C