Toshiba Semiconductor and Storage
N-CH MOSFET 40V, +/-20V, 12A ,0
Structured electrical, mechanical and environmental parameters from imported product attributes.
| Rds On (Max) @ Id, Vgs | 12mOhm @ 4A, 10V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 7.5 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1110 pF @ 20 V |
| Manufacturer | Toshiba Semiconductor and Storage |
| Mounting Type | Surface Mount |
| Product Status | Active |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 2.4V @ 100µA |
| Drain-to-Source Voltage | 40 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 12A (Ta) |
| Max Power Dissipation | 1.5W (Ta) |
| Package | Tape & Reel (TR) Cut Tape (CT) |
|---|
| Grade | Automotive |
|---|---|
| Operating Temperature | 175°C |
| Qualification | AEC-Q101 |