General
| Rds On (Max) @ Id, Vgs | 33mOhm @ 4A, 4.5V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 3.6 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 410 pF @ 10 V |
| Manufacturer | Toshiba Semiconductor and Storage |
| Mounting Type | Surface Mount |
| Packaging | Tape & Reel (TR) Cut Tape (CT) |
| Part Status | Active |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±8V |
| Vgs(th) (Max) @ Id | 1V @ 1mA |