Toshiba Semiconductor and Storage
P-CH MOSFET -30V, -20/+10V, -4A
Structured electrical, mechanical and environmental parameters from imported product attributes.
| Rds On (Max) @ Id, Vgs | 45mOhm @ 4A, 10V |
|---|---|
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 6.2 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 492 pF @ 10 V |
| Manufacturer | Toshiba Semiconductor and Storage |
| Mounting Type | Surface Mount |
| Product Status | Active |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | +10V, -20V |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Drain-to-Source Voltage | 30 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 4A (Ta) |
| Max Power Dissipation | 1.5W (Ta) |
| Package | Tape & Reel (TR) Cut Tape (CT) |
|---|---|
| Package / Case | 6-SMD, Flat Leads |
| Supplier Device Package | 6-TSOP-F |
| Operating Temperature | 150°C |
|---|