SSM6J808R,LXHF

Toshiba Semiconductor and Storage

SSM6J808R,LXHF

Datasheet

Analog & Power

AUTO AEC-Q SS MOS P-CH LOGIC-LEV

Active6-SMD, Flat LeadsAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs35mOhm @ 2.5A, 10V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs24.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1020 pF @ 10 V
ManufacturerToshiba Semiconductor and Storage
Mounting TypeSurface Mount
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs (Max)+10V, -20V
Vgs(th) (Max) @ Id2V @ 100µA

Electrical

Drain-to-Source Voltage40 V
Drive Voltage (Max Rds On, Min Rds On)4V, 10V
Current - Continuous Drain (Id) @ 25°C7A (Ta)
Max Power Dissipation1.5W (Ta)

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)

Environmental

GradeAutomotive
Operating Temperature150°C
QualificationAEC-Q101