Structured electrical, mechanical and environmental parameters from imported product attributes.
| Rds On (Max) @ Id, Vgs | 50mOhm @ 3A, 10V |
|---|---|
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 7.9 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 560 pF @ 15 V |
| Manufacturer | Toshiba Semiconductor and Storage |
| Mounting Type | Surface Mount |
| Product Status | Active |
| Series | U-MOSVI |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±12V |
| Vgs(th) (Max) @ Id | 1.2V @ 1mA |
| Drain-to-Source Voltage | 30 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 3.6A (Ta) |
| Max Power Dissipation | 500mW (Ta) |
| Package | Tape & Reel (TR) |
|---|---|
| Package / Case | SOT-563, SOT-666 |
| Supplier Device Package | ES6 |
| Operating Temperature | 150°C |
|---|